Method for uninterrupted growth of high-quality InGaN/GaN multi-quantum well (MQW)

The invention discloses a method for uninterrupted growth of a high-quality InGaN/GaN multi-quantum well (MQW). The method comprises the following steps of: carrying out uGaN epitaxial growth on a sapphire-patterned substrate, growing nGaN on uGaN, and then, growing an MQW stress release layer on nGaN; carrying out InGaN/GaN MQW epitaxial growth on the MQW stress release layer; repeatedly growing a plurality of InGaN/GaN MQWs on the InGaN/GaN MQW; and growing pAlGaN and pGaN needed by a GaN-based LED (Light Emitting Diode) on the InGaN/GaN MQWs. According to the method for the uninterrupted growth of the high-quality InGaN/GaN MQW, a metal organic chemical vapor deposition method is adopted, and the growth of the GaN is kept during the process of switching growing conditions for quantum wells and quantum barriers, namely the uninterrupted growth of the quantum wells, so that the time required for the growth of the MQW is shortened, the production efficiency is greatly increased, and meanwhile, an LED epitaxial wafer with the high-quality InGaN/GaN MQW is obtained.