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A Highly Reliable Method with Data-Retenrion Characteristics in TLC NAND Flash Memories
A Highly Reliable Method with Data-Retenrion Characteristics in TLC NAND Flash Memories
2016
Nakamura Toshiki
Deguchi Yoshiaki
Takeuchi Ken
Keywords:
NAND gate
Computer hardware
Computer science
Embedded system
nand flash memory
Correction
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