GaN HEMT Noise Model Based on Electromagnetic Simulations

This paper presents a new approach for the definition and identification of a transistor model suitable for low-noise amplifier (LNA) design. The resulting model is very robust to layout modifications (i.e., source degeneration) providing accurate predictions of device noise-performance and small-signal parameters. Moreover, the described procedure is very robust since it does not require any numerical optimization, with possibly related problems like local minima and unphysical model parameters. The adopted model topology is based on a lumped element parasitic network and a black-box intrinsic device, which are both identified on the basis of full-wave electromagnetic simulations, as well as noise and ${ S}$ -parameter measurements. The procedure has been applied to three GaN HEMTs having different peripheries and a Ku-band LNA has been designed, demonstrating a very good agreement between measurements and predicted results.