Surface passivating method of semiconductor photoelectric device

The invention discloses a surface passivating method of a semiconductor photoelectric device. The surface passivating method comprises the following steps of: covering a sulfur atom layer on the surface of the semiconductor photoelectric device, and covering a medium film on the sulfur atom layer, wherein the atom layer can be formed by virtue of an anode vulcanization method, and the medium layer can be SiO2 or ZnS. In an electrochemical reaction process, the sulfur atoms are bonded with suspension bonds on the surface of the device, so that an electronic channel produced by surface suspension bonds is sealed, and therefore, an electron-cavity compound mechanism of the apparatus surface is isolated. The surface passivating method of the semiconductor photoelectric device has the advantages of simple operation, low cost and remarkable passivating effect.