Method for preparing peripheral conductive path of magnetic random access memory

The invention relate to a method for preparing high-quality peripheral conductive path (ECM, Electrical Conducting Means) in a nanoscale magnetic random access memory (MRAM). The EMC has high conductivity and can stop Cu electromigration. A diffusion barrier layer (DBL, Diffusion Barrier Layer) and an adhesion enhancement layer (AEL, Adhesion Enhancement Layer) can adopt appropriate materials to obtain MRAM devices with high reliability. To further decrease the total thickness of the DBL and the AEL, a Single-layer alloyed diffusion barrier layer (ADBL, Alloyed Diffusion Barrier Layer). A material of the ADBL can be selected from Co, Ru or Cr alloy, and other elements of the alloy can be selected from W, Ti, Pt, Rd, Hf, Nb, Zr, and V, wherein the content of these elements is 5%-40%.