p-i-n diode recovery storage time
1980
Abstract Using numerical methods, the high injection equations for carrier concentration in the i -base of a p - i - n diode are solved to determine storage time during diode recovery with equal forward and reverse currents. Graphs are obtained which relate the storage time to the i -base width, the high injection lifetime of carriers in the i -base, the current density, and the h parameters which characterise recombination in the p and n emitters. The most important results are that the storage time increases on decreasing the base width from a large value and becomes smaller as the current increases and that recombination in the p emitter decreases storage time more than recombination in the n emitter. The numerical method used to obtain these results is described.
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