Proton implantation in lateral IGBTs

The effect of proton implantation on the performance of n- and p-channel, 500-V lateral insulated gate bipolar transistors (LIGBTs) are studied. It is shown that proton implantation results in a better forward drop vs. turn-off time than conventional electron irradiation. Since proton damage is also more thermally stable than electron damage, proton implantation is a better choice in LIGBT optimization for minimum power loss. >