InP on SOI devices for optical communication and optical network on chip
2011
For about ten years, we have been developing InP on Si devices under different projects focusing first on
μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied
on SiO 2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the
heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different
lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical
communication within an optical network. For high performance computing with high speed communication
between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of
optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based
on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the
silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in
a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent
laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in
the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room
temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled
output power is ~7mW. Direct modulation can be achieved with already 6G operation.
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