The Pulsed I d -V g methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-κ dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trapinduced threshold voltage shift (△V t ), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-κ gate dielectric devices.