A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperature
2016
A graphene transistor integrated on-chip on a hexagonal boron nitride-capped TaS2 layer provides a voltage-tunable, low-resistance load for controlling a TaS2 metal–insulator transition, enabling a compact voltage-controlled oscillator operating at room temperature.
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