Epitaxial CoSi2 film grown on Si substrate by solid interaction of Co/Ti/Si and TiN/Co/Ti/Si multilayer

CoSi 2 is being investigated intensively for microelectronics application recently. In this paper a new method of growing an epitaxial CoSi 2 film by solid state reaction of Co/Ti/Si and TiN/Co/Ti/Si multilayer is described. The variation of structure and sheet resistance of the film with thermal annealing temperature and time has bee investigated. The kinetics and mechanism of the CoSi 2 solid-state epitaxy are discussed.