Diopside-Anorthite 系의 誘電體 및 絶緣體에 關한 硏究

Diopside-Anorthite body was easily synthesized at relatively low temperature 1225℃, compared with the synthesizing temperature 1425℃ of Anorthite. Of Diopside-Anorthite body, the synthesizing temperature was considered to be higher than 1225℃ because Gehlenite, probably formed at 1220℃, was detected by X-ray diffraction. This body has excellent physical and electrical properties, i. e. electric resistivity (1.2×10 14 Ω㎝), low dielectric constant (6.26) and low thermal expansion coefficient (61.9×10 -7 /℃). It's hardness was good enough for electrical subsidiary. In addition, this body, Diopside-Anorthite, has excellent properties for heat resisting wares.