A method of making an interconnect structure TSV

The invention discloses a manufacturing method of a silicon through hole interconnect structure, belonging to the field of microelectronic packaging. The manufacturing method comprises the following steps of: 1) splicing a glass wafer on the front of a silicon wafer; 2) thinning the back of the silicon wafer to reach a target thickness, and preparing a silicon through hole of the silicon wafer; 3) sequentially depositing an insulating layer and a seed layer on the back of the silicon wafer; 4) making an electroplating mask on the back of the silicon wafer, and filling the silicon through hole by an electroplating conductive material to form a bump; and then making a bonding pad on the bump, and exposing the insulating layer at the periphery of the bump; and 5) splicing the back of the silicon wafer onto a glass wafer, and stripping the glass wafer; removing the insulating layer deposited at the bottom of the silicon through hole by etching on the front of the silicon wafer, making a rewiring layer to be electrically connected with the seed layer deposited in the silicon connecting through hole and the microelectronic circuit, and making the bonding pad for the rewiring layer. By adopting the manufacturing method disclosed by the invention, deposition effect of the seed layer and electroplating filling effect can be conveniently monitored, technical difficulty of a process is reduced, and yield is improved.