Scalable Small-Signal Modeling of AlGaN/GaN HEMT Based on Distributed Gate Resistance

This paper reports on scalable small signal modeling of AlGaN/GaN high-electron-mobility transistors (HEMTs) based on distributed gate resistance model. A distributed gate resistance model (DGRM) is used to model large periphery of GaN HEMT with various gate widths. A fully scalable analytical small signal model is developed with the experimental results. Intrinsic parameters, independent of the frequency, have been shown. Furthermore, S-parameters are obtained from the modeling and measurements to verify the model. The good agreement between the measured and the simulated results indicate that this model is accurate, stable and comparatively more representative of the real evolution of local resistance in the gate. The proposed scalable DGRM would be useful for accurate scalable large signal modeling of large periphery GaN HEMTs for high power RF application.