Electrical Characteristics of TiO(2-x)/TiO2 Resistive Switching Memory Fabricated by Atomic Layer Deposition.

The rewritable low-power operated nonvolatile resistive random access memory device composed of Al(top)/TiO(2-x)/TiO2/Al(bottom) are demonstrated. The active component, the TiO2 layer of the device, is fabricated by atomic layer deposition. The oxygen vacancy TiO(2-x)/TiO2 layer annealed at 600 degrees C using rapid thermal annealing and it was proven to be in the rutile phase by X-ray diffraction analysis. The device exhibits nonvolatile memory behavior consistent with resistive switching properties, demonstrates an ON/OFF ratio of approximately 1,000:1, requires range of low voltage less than 0.4 V, and is still operational more than 120 times.