Magnetoresistance measurements in microstructured InGaAs/InP wires

Abstract Microstructured In .53 Ga .47 As wires with widths between 80nm and 50μm were fabricated from modulation doped heterostructures. All wires show a finite magnetoresistance down to 40mK. The resistivity (B = OT, T = 40mK) of the wires increases with decreasing wire width only about 4 times compared to the value at 50μm wire width, indicating only very small dry etch damage. The wires show a negative magnetoresistance for B⩽0.3T a distinct resistance maximum and reproducible resistance fluctuations (UCF's) at lower magnetic fields and Shubnikov-de-Haas oscillations at higher fields.