Ultraviolet photodetectors based on wide-bandgap A3B5 compounds

We report on the fabrication and characterization of ultraviolet photodetectors with Schottky barrier based on semiconductor GaP, GaPxAs1-x and GaAs. As row materials are used n-n+-type epitaxial structures. Base parameters of the photodetectors are demonstrated.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.