A method for producing an optoelectronic semiconductor component and optoelectronic semiconductor laser

A method for producing an optoelectronic semiconductor component (1) comprising the steps of: - epitaxially growing a semiconductor layer sequence (2) with an active layer on a growth substrate (3), - forming a front facet (4) on the semiconductor layer sequence (2) and the growth substrate (3), - coating a portion of the front facet (4) having a light-blocking layer (5) for the in the finished semiconductor device (1) generated radiation (R), wherein the light-blocking layer (5) is generated with a directional coating method and patterning the light blocking layer (5) when coating by means of shadowing by the growth substrate (3) and / or by at least one blind bars (6) which is disposed at and / or adjacent to the growth substrate (3) takes place.