The Co-film-thickness dependent lateral photoeffect in Co-SiO 2 -Si metal-oxide-semiconductor structures
2008
We report a transient lateral photoeffect (LPE) in thin metallic Co films deposited on n-type Si substrates with native SiO2 surfaces. Under the nonuniform irradiation of a laser beam, the lateral phtovoltage (LPV) shows high sensitivity to the laser position in the metal film plane. This effect can be interpreted by the metal-semiconductor (MS) junction formed between metal and semiconductor. The LPV depends significantly on the thickness of Co film. The position sensitivity shows a peak value of 42.6 mV/mm for Co2.8 nm-SiO2-Si and decreases greatly with the increase of the Co film thickness. We explain that by the shorting effect of the metallic film.
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