Benefits of SiF,' Implanted Titanium Silicides in Advanced CMOS Fabrication

We present, for the first time, dramatic improvements in the titanium silicide quality by adding SiF,' mixing implantation in advanced CMOS SALICIDE (Self-aligned silicide) process. We obtained 4X reduction in contact resistance and an extremely tight distribution (0 - 0.09 Q) for N+, P+, N-poly, and P-poly contacts. Due to the