Thin film transistor, thin film transistor array panel and manufacturing method for a thin film transistor array panel

PURPOSE: A thin film transistor, a thin film transistor array panel and a method for manufacturing the thin film transistor array panel are provided to improve the characteristics of the thin film transistor, by forming a source electrode and a drain electrode using a metal oxide. CONSTITUTION: A gate line including gate electrode (124) is located on a substrate (110). A gate insulating layer (140) is located on the gate line. An oxide semiconductor layer (154) is located on the substrate. A source electrode (173) and a drain electrode (175) are located on the oxide semiconductor layer. A first insulating layer (180a) including a first contact hole is located on the source electrode and the drain electrode. A data line (171) crossing with the gate line is located on the first insulating layer.