Enhanced Thermoelectric Performance of AgSbSe2 via Manganese Doping

Abstract AgSbSe2 exhibits promising thermoelectric performance due to its original low thermal conductivity. Herein, we first investigate the influence of Mn doping on the thermoelectric transport behavior of AgSbSe2. The results display that the substitution of Mn2+ in the Sb3+ sublattice increases the carrier concentration and reduces the lattice thermal conductivity, finally leading to a high ZT value of ∼1.05 at 673 K and ZTave of ∼0.63 from 300 to 673 K for AgSb0.96Mn0.04Se2. The efficiency of ∼8.8% obtained here is of great significance for practical application.