A 5V-only E 2 PROM using 1.5µ lithography

1983 
A floating-gate E 2 PROM technology with 1.5μm design rules used to build a 5V-only 2K×8 E 2 PROM with a cell size of 270μm 2 and chip area of 23,000 mil 2 will be described. Typical memory access is 200ns with 450mW power dissipation.
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