KrF excimer laser induced formation of thin crystalline silicon carbide layers

Thin silicon carbide layers have been the subject of numerous works. Crystalline silicon carbide (SiC) is characterized by a refractory nature, a high thermal conductivity, a high electron mobility and a large band gap. Actually, SiC is one of the promising materials for high-temperature device applications. In this work, we investigate the excimer laser crystallization of thin amorphous silicon carbide films deposited by sputtering method onto single crystalline silicon. The crystallized samples were characterized with grazing incidence X-rays diffraction and infrared spectroscopy. The obtained results show the formation of α-SiC. The nature of SiC poly-type depends on the laser irradiation energy. The epitaxial growth of the α-SiC has been observed.