Structural dependence of 1.3-/spl mu/m narrow-beam lasers fabricated by selective MOCVD growth

The effect of structural parameters on the lasing characteristics of 1.3-/spl mu/m narrow beam lasers has been investigated. Monolithically integrated vertically tapered multiquantum-well (MQW) waveguide, fabricated by use of selective metal-organic chemical vapor deposition (MOCVD), is used for the expansion of the optical spot size. It is experimentally shown that the energy separation between the gain and waveguide regions that is formed simultaneously by selective MOCVD is shown to be an important parameter in order to achieve low-threshold current density and good temperature characteristics. The lengths of gain and waveguide regions have been investigated in terms of temperature characteristics of threshold current and far-field angle. A lower threshold current density and a higher characteristic temperature were obtained for longer gain region, We also have estimated the waveguide loss of the mode-field converter lasers diodes (MFC-LD's). High performance of 1.3-/spl mu/m integrated vertically tapered waveguide lasers were achieved in an optimized device.