Effects of Annealing Time on Electrodeposited-n-Cu2O Thin Film

This work focuses on the analysis of structural, morphological, topological and optical properties of n-type cuprous oxide (Cu2O) thin film through the various duration of the annealing process. The n-type Cu2O thin film used in this research was fabricated on Fluorine-Doped Tin Oxide (FTO) glass substrate by using potentiostat electrodeposition method at optimized parameters. The optimized parameters were fixed at pH 6.3, temperature of 60oC, deposition time of 30 minutes and potential voltage at -0.125 V vs Ag/AgCl. Then, the samples of n-type Cu2O were subjected to a different annealing time set of 20, 30, 40, 50 and 60 minutes. It was found that the most optimized annealing duration was 60 minutes with a fixed annealing temperature of 200 oC. From the results, the properties of the n-type Cu2O thin film had enhanced by introduction of the annealing process. All the properties had characterized by using X-Ray Diffraction (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM), Atomic Force Microscopy (AFM), Ultraviolet visible spectrometer (UVVis) and Four Point Probe.