Measurement of Carrier Properties in InSb using Faraday Rotation

Carrier properties of n‐type InSb doped with tellurium at liquid nitrogen temperature have been estimated by means of transmission of a millimeter wave (119.3 GHz) propagating along a magnetic field up to 4 T. The information of carrier properties is obtained from the Faraday rotation arising from the difference between phase velocities of two circularly polarized components. The advantage of this method lies in the fact that it allows both the electron density and effective mass to be measured simultaneously.