Cu2O Quantum Dots (QDs) sensitized p-CuSCN photoelectrochemical cell

p-CuSCN was sensitized with quantum dots (QDs) of Cu2O for the first time to make photoelectrochemical cells. Cu2O QDs were prepared on Cu/p-CuSCN photoelecrode by boiling Cu/p-CuSCN in a 1 M CuSO4 solution. Boiling time controlled the size of the quantum dots. It was found that the boiling time below 20 min, QDs of Cu2O can be fabricated on p-CuSCN and for longer period of boiling above 20 min Cu2O micro crystals were fabricated on p-CuSCN forming a p-CuSCN/n-Cu2O junction photoelectrode. Higher photocurrents were shown from the QD sensitized photoelectrochemical cells with compared to that of the Cu/p-CuSCN/n-Cu2O junction photoelectrochemical cells. Photocurrent measurements, diffuse reflectance spectra and SEM michrographs were presented to explain the mechanism of photocurrent enhancement for the p-CuSCN sensitized QDs of Cu2O.