Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular‐beam epitaxial growth of InGaAs single quantum wells on GaAs

The influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular‐beam epitaxial growth of lattice mismatched InGaAs single quantum wells on GaAs have been investigated. For growth of In0.25Ga0.75As at temperatures 570 °C) where an indium‐induced (4×2) surface reconstruction exists. For growth at 590 °C, Auger electron spectroscopy measurements indicate that the indium atoms reside on the surface of the as‐grown layer. However, the growth front of InGaAs remains plan...