Low Temperature Photoluminescence Of GaAs/GaInP Heterostructures Measured Under Hydrostatic Pressure

A study of 11 K photoluminescence measurements of metalorganic vapor phase epitaxy grown GaAs/GaInP quantum wells is reported for the first time at pressures up to ∼5 GPa. The use of low temperature allows us to study the true nature of a peak at ∼1.46 eV, which dominates instead of the GaAs QW emission, even at very low excitation intensities to pressures well above the Γ‐X crossover in GaInP. Our results suggest that the ∼1.46 eV emission is a spatially indirect transition of electrons and holes separated at the interface in a type II band alignment.