GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06 /spl mu/m

A resonant-cavity enhancer separate absorption, charge, and multiplication avalanche photodiode using GaAs 0.8 Sb 0.2 quantum wells on GaAs has been demonstrated. The device exhibited high gain and < 1 nA dark current at 90% of breakdown. Peak quantum efficiency of 93% and full-width at half-maximum of 7 nm were observed at 1.064 μm.