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Investigation of Lateral RESURF, 6H-SiC MOSFETs
Investigation of Lateral RESURF, 6H-SiC MOSFETs
2000
Anant K. Agarwal
N. S. Saks
S. S. Mani
V.S. Hegde
P. A. Sanger
Keywords:
Composite material
Power MOSFET
LDMOS
Materials science
Engineering physics
Correction
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