Galvanomagnetic Properties At 4.2 K of Bismuth Irradiated With Fast Electrons

The results are presented of the effect of irradiation of bismuth with 1 MeV electrons on the low-temperature (4.2K) galvanomagnetic properties in fields up to 2.3 T. The data are analysed quantitatively assuming a rigid-band model. It is concluded that the Frenkel pairs created by irradiation act as donor impurities with an efficiency of 0.14 extrinsic electrons per pair, and substantially limit the carrier mobilities. These combined effects, taking into account the low intrinsic carrier density in bismuth, explain the observation that irradiation with 1 MeV electrons has a relatively much larger effect on the conductivity of bismuth than on that of any other metal.