Local photoluminescence properties of InGaN green laser structure on (0001) GaN substrate

Akio Kaneta,Takayuki Hira,Yoon Seok Kim,Mitsuru Funato,Yoichi Kawakami,Takashi Miyoshi,Shin-ichi Nagahama

Local photoluminescence properties of InGaN green laser structure on (0001) GaN substrate

2013

Akio Kaneta
Takayuki Hira
Yoon Seok Kim
Mitsuru Funato
Yoichi Kawakami
Takashi Miyoshi
Shin-ichi Nagahama

The spatial variation of the PL intensities and peak wavelengths are drastically suppressed in InGaN green laser structure fabricated on (0001) GaN substrate. This result is thought to contribute to low threshold current density.

Keywords:

Optics
Optoelectronics
Blue laser
Confocal microscopy
Laser
Photoluminescence
Current density
Physics
Semiconductor laser theory
Wavelength
Electric field
Substrate (chemistry)
green laser

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