Content address memory and processing method thereof
2017
The invention provides a content address memory and a processing method thereof. The content address memory comprises a first P-type transistor, a second P-type transistor, a first memristor, a second memristor, a first NOT gate, a second NOT gate, a capacitor, a matching line, a write line, a first data line and a second data line, wherein the first P-type transistor and the first memristor are connected in series between the matching line and the write line; the control end of the first P-type transistor is connected with the first data line through the first NOT gate; the second P-type transistor and the second memristor are connected in series between the matching line and the write line; the control end of the second P-type transistor is connected with the second data line through the second NOT gate; and one end of the capacitor is connected with the matching line, and the other end is connected with the write line. By use of the content address memory and the processing method thereof provided by the invention, a circuit structure is effectively simplified, the time delay and the power consumption of the circuit are reduced, and the efficiency of query and a write operation is improved.
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