Germanium as an integrated resistor material in RF MEMS switches
2007
This paper introduces the use of germanium as resistive material in RF MicroElectroMechanical (MEMS)
devices. Integrated resistors are indeed highly required into RF MEMS switches, in order to prevent any RF
signal leakage in the bias lines and also to be compatible with ICs.
Germanium material presents strong advantages compared to others. It is widely used in microtechnologies,
notably as an important semi-conductor in SiGe transistors as well as sacrificial or structural layers and also
mask layer in various processes (Si micromachining especially). But it also presents a great electrical
characteristic with a very high resistivity value. This property is particularly interesting for the elaboration of
integrated resistors for RF components as it assures miniaturised resistors in total agreement with
electromagnetic requirements.
Its compatibility as resistive material in MEMS has been carried out. Its integration in the entire MEMS process
has been fruitfully achieved and led to the successful demonstration and validation of integrated Ge resistors into
serial RF MEMS variable capacitors, without any RF perturbations.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
1
Citations
NaN
KQI