Design and analysis of a high fill-factor SOI diode uncooled infrared focal plane array
2013
A new concept for uncooled infrared (IR) imaging with a high fill-factor SOI diode structure
has been proposed. This approach has the potential of reaching a noise equivalent temperature
difference (NETD) in the milli-Kelvin range. This detector makes the IR absorbing structure
cover almost the entire pixel area, in which the fill factor can reach 80%. Using the multilever
structure, thermal isolation can be independently optimized without sacrificing the IR
absorption area. The analysis shows that this high fill-factor SOI diode uncooled IR focal
plane array can be made without failure of structure breakdown or buckling. The design shows
that the sensitivity is of 7.75 × 10?3 V K?1, and the NETD is of 42 mK (f/1.0, 30Hz) which
can be achieved in a 35 μm × 35 μm micromachined structure.
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