GaN nanowires growth with record growth rate using Ti thin film

In this paper we present a new technological approach for GaN nanowires synthesis using metal-organic chemical vapor deposition. This aproach is to use thin titanium film, which promote nanowires seeds formation. Such an approach allows to synthesis nanowires with diametr in the range of 30 nm- 3 mkm, strongly oriented along saphire c axis and with regular hexagonal shape. A good quality of the nanowires material is confirmed by low temperature micro-photoluminescence spectrum of single nanowire, where spectral lines, corresponded to free and bound excitons, are observed.