Analysis of Transition Metal Dichalcogenide Materials Based Nanotube

In this work, transition metal dichalcogenide (TMDC) material-based nanotube is developed and studied. HfO2 and SiO2 are used as the insulating material, and various characteristics are compared. Different characteristics measured are Ion/Ioff ratio, average sub-threshold slope, Id–Vgs curve, and total capacitance. After comparison, MoS2 turned out as most promising material as it provides highest ON state current but has own set of disadvantages as it has lower sub-threshold slope and due to less tunneling width MoS2 suffers from poor total capacitance. Due to reduced sub-threshold slope and higher Ion/Ioff ratio, nanotubes can be considered as possible candidate to replace field effect transistors in future.