Study of Quality Factor of Silicon Based NOT Logic Gate Using FDTD

This paper presents a design of optical-NOT logic gate with air as a substrate and Silicon is used as the dielectric for rods fabricated with photonic crystal with dielectric constant of 11.49 and lattice constant of. 5943 and works at wavelength of 1700nm. The radius of rods is 0.2a produced on a wafer of size 12µm x 12µm. The behavior of this logic gate is studied by finite difference time domain method (FDTD) and photonic band gap is calculated by PWE method. The quality factor of our NOT logic gate is 1559.