Tailoring of SiC nanoprecipitates formed in Si

Abstract The SiC synthesis through single-beam of C + , and simultaneous-dual-beam of C + & Si + ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C + & 890-keV Si + ) and single-beam (520-keV C + ) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.