Interface roughness scattering in type II band offset GaInAsSb/InAs single heterostructures

We present experimental study of the influence study of the influence roughness (IFR) scattering on mobility in the type II band offset p‐GaInAsSb/p‐InAs heterostructures with self‐consistent quantum wells and 2D‐electron channel at the interface. It was shown that IFR scattering dominates carrier mobility. Low‐temperature mobility decreases as μ∼d2 by increasing acceptor (Zn) doping level of quaternary layer. Parameters of IFR scattering, the height Δ=12 A and correlation length Λ=100 A were evaluated from technological and photoluminescence data.