Raman Spectroscopy of Pulsed‐laser annealed ion implanted silicon

Single crystal (100) oriented Si samples, were subjected to Si ion implantation (2×1015–6×1015 at. cm−2) at different energies corresponding to the creation of a 150 nm or 500 nm thick amorphous layer. Recrystallization was induced by using a pulsed (100 ns) Q‐switched ruby laser (λ=694 nm, energy densities between 0.6 Jcm−2 and 3.2 Jcm−2), either unfocused or focused onto the sample surface. The laser annealed region was studied by scanning a small Raman laser beam across it. It has been found that from the center to the edge of a single shot annealed region, the frequency of the Raman has been attributed to size effects associated with scattering from small crystallites of non‐perfectly recrystallized Si.