Schottky barrier diode based on multilayer MoTe$$_2$$ and the gate control of the direction of rectification

We have investigated Schottky barrier diode based on MoTe $$_2$$ with Au and Cr/Au asymmetric contacts. While many metals show strong Fermi level pinning close to the valence band of MoTe $$_2$$ , one can change MoTe $$_2$$ -Au Schottky contact via simple thermal annealing. The Schottky diode showed a clear rectification operation with a rectification ratio of 10–100 and the ideality factor of $$\sim$$ 1.5. Utilising the ambipolar nature of MoTe $$_2$$ , we could control the direction of rectification by changing the majority carrier with a gate voltage.