AES and EELS study of aluminium oxide thin films

Amorphous aluminium oxide films were prepared by vapor deposition using a special molybdenum evaporation cell heated by electron bombardment. The Al/O stoichiometry of layers was controlled in situ by Auger Electron Spectroscopy (AES) and by Electron Energy Loss Spectroscopy (EELS) that permitted to monitor the increase of Al/AlO x Auger intensity ratio and the presence of metallic aluminium in the deposit (Al 0 rich layer) via an excitation of Al plasmon. We investigated the surface stoichiometry by comparing the AES and EELS spectra of deposited layers with the bulk α-alumina and oxidized aluminium. It has been demonstrated that the vapor deposition method gave good quality layers without their contamination by crucible material. © 1998 Elsevier Science S.A.