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Acemap > Paper > Fabrication of 80-nm T-gate high indium Ino.7Gao.3As/Ino.6Gao.4As composite channels mHEMT on GaAs substrate with simple technological process

Fabrication of 80-nm T-gate high indium Ino.7Gao.3As/Ino.6Gao.4As composite channels mHEMT on GaAs substrate with simple technological process

2016 
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