V-Band Double-Drift Read Silicon IMPATTs

Double-drift hybrid Read silicon IMPATTs have been fabricated in the millimeter-wave frequency range with RF performance superior to that of more conventional double-drift flat diodes. State-of-the-art output power of 2.15 W was obtained at 60 GHz with 8.8 percent efficiency. The best DC-to-RF conversion efficiency achieved was 12 percent.