The TID effects of RRAM based oxide material

liuming,Yan Wang,Jinshun Bi,Jing Liu,Qi Liu,Hangbing Lu,Shibing Long

The TID effects of RRAM based oxide material

2015

liuming
Yan Wang
Jinshun Bi
Jing Liu
Qi Liu
Hangbing Lu
Shibing Long

RRAM exhibit highly stable characteristics under TID radiation. But different radiation effects are shown in the RRAM based different oxide. The radiation effects in RRAM based HfO2 and SiO2 are test and analyzed.

Keywords:

Oxide
Resistive random-access memory
Radiation
Electronic engineering
Materials science
Optoelectronics

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations