Effect of photoexcited carriers on Raman spectra of a hydrogenated GaAs crystal implanted with silicon

The interaction of atomic hydrogen with impurities and defects in different semiconductor materials, its ability to form neutral complexes with electrically and recombinationally active centers is of great interest for semiconductor physics and may turn out to be useful in creating new quantum-electronics materials [i]. Therefore investigations of various sides of the phenomenon of hydrogen passivation is important. In this work the effect of pulsed power of excitation on the Raman spectra of hydrogenated GaAs crystals implanted with silicon atoms is examined (GaAs:Si-H). Spectroscopic methods have already proved attractive for determining the position of the Si and H atoms on GaAs:Si--H, for the study of complexes arising on neutralization by hydrogen of silicon donors, and also for determination of the vibrational frequencies of Ga--H (D) and As-H (D) [2-4]. The Raman method detected the high sensitivity of the two-phonon GaAs band to a dose of irradiation by silicon atoms [5], but the effect of hydrogen passivation on Raman spectra was not discussed. In this work photostimulated d&sordering of the GaAs:Si--HI crystal was investigated using Raman spectra on pulsed excitation. Besides, application of the spatial correlation model [6] is examined for taking into account both the effect of disordering of the crystal, and photoexcitation of carriers on Raman spectra.