Comparative study of two input DR loaded GaAs FET oscillators

Two GaAs FET oscillators at 10.8 GHz are designed with identical requirements on the source and load reflection coefficients. Both designs employ a dielectric resonator (DR) coupled microstrip line as the resonating element connected to the source port, one with a terminating resistance and the other open circuited. The performance of both designs are compared with respect to their short-term stability. >